3rd TAGRA

Inorganic hole transport layers (HTLs) play an important role in improving charge transport and the performance of photovoltaic devices. However, their electrical and interfacial properties still need to be improved. Dopant engineering is a useful approach to modify the properties of inorganic HTLs by controlling their conductivity, defect characteristics, and charge transport. This work focuses on the use of dopants to improve inorganic HTLs, particularly copper-based materials such as CuI and CuSCN, for photovoltaic applications. The effects of dopant concentration on the structural, optical, morphological, and electrical properties of the HTLs are considered. Optimized doped HTLs can improve hole extraction, reduce charge recombination, and enhance photovoltaic performance. Overall, dopant engineering provides a simple and effective approach for developing more efficient and stable inorganic HTLs for next-generation photovoltaic devices.