Dec 21 – 22, 2024 HYBRID
Erzurum, Turkiye
Europe/Istanbul timezone

Numerical Insights into Defect-Induced Performance Limitations in Doped PANI/GO-Based Perovskite Solar Cells

Dec 22, 2024, 11:30 AM
15m
D/1-1 - Hall 1 (Campus VSTS)

D/1-1 - Hall 1

Campus VSTS

20
Oral Presentation Nanoelectronics and Devices Electronics and Devices (Online)

Speaker

Ms Nabilah Ahmad Jalaludin (Universiti Teknikal Malaysia Melaka)

Description

This research investigates the critical role of defects in the absorber and interface layers of organic-inorganic lead halide perovskite solar cells (PSCs), with a specific emphasis on methylammonium lead triiodide (MAPbI3) PSCs that utilize doped polyaniline/graphene oxide (PANI/GO) as the hole transport layer (HTL). The study employs numerical simulations to comprehensively analyse experimental data, facilitating a robust comparison between simulated results and empirical findings. It reveals the detrimental impact of defects on the overall performance of these devices, particularly highlighting that interface defects at the absorber/hole transport layer (Abs/HTL) interface significantly impair power conversion efficiency (PCE). Notably, a decline in PCE to 7.65% is observed at a defect density of 1×1014 cm-2, compared to 11.25% at the electron transport layer/absorber (ETL/Abs) interface. These findings underscore the necessity for targeted control measures at the Abs/HTL interface to mitigate these adverse effects. Furthermore, the study explores the effects of defects on device performance to determine defect tolerance for enhanced overall efficiency. It identifies the density of defect tolerance in the absorber layer, revealing that both interfaces (ETL/Abs and Abs/HTL) exhibit tolerances of 1016 cm-2, 1013 cm-2, and 1010 cm-2, respectively. Despite these challenges, the simulations demonstrate a PCE of 15.37%, representing a 40% improvement over experimental data. This enhancement highlights the potential of doped PANI/GO materials in addressing defects that typically hinder performance. Ultimately, insights from this research contribute to advancing both the efficiency and stability of PSCs by addressing defect-related challenges inherent in their architecture.

Keywords Interface Defect, Doped PANI/GO, Hole Transport Layer, Perovskite Solar Cell

Primary author

Ms Nabilah Ahmad Jalaludin (Universiti Teknikal Malaysia Melaka)

Co-authors

Dr Faiz Arith (Universiti Teknikal Malaysia Melaka) Dr Fauziyah Salehuddin (Universiti Teknikal Malaysia Melaka)

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