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Perovskite solar cells (PSCs) have emerged as a leading technology in photovoltaics, producing remarkable efficiency and cost-effective production methods. Copper(I) thiocyanate (CuSCN) has garnered attention as an effective hole transport layer (HTL) in PSCs due to its advantageous electronic properties, high stability, and excellent hole mobility. This study investigates the effects of lanthanum (La) doping on the optical and electronic properties of CuSCN. Various doping concentrations have been explored ranging from 1 to 5 mol% resulting in band gap values ranging from 3.6 eV to 3.72 eV. These findings confirm that La doping effectively tunes the band gap of CuSCN, which is crucial for optimizing charge transport and enhancing device performance in PSCs. In summary, La-doped CuSCN represents a promising HTL material for next-generation PSCs, contributing to enhanced efficiency and stability in photovoltaic applications. This research highlights the potential of tailored doping strategies to optimize material properties in pursuing high-performance solar technologies.
Keywords | band gap, CuSCN, hole transport layer, lanthanum, perovskite solar cells |
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