TAGRA 2024

Metal oxides such as hematite(α-Fe2O3) are frequently preferred in electronic device design because they are easily found in nature and have low cost and toxicity. It has been used in many studies due to its practical applications. In the studies conducted, experiments and measurements with different parameters are involved in order to examine the properties of the materials. The crystal structure was characterized by XRD, optical properties by absorption-bandgap, and surface morphology by SEM analysis. In this study, the properties of Ag doped α-Fe2O3 (hematite) thin films grown on different substrates were compared. The selected substrates were glass and ITO materials. The films were grown by magnetron sputtering technique. F1 indicates the film used on glass substrate, while F2 indicates the film used on ITO substrate.