Dec 21 – 22, 2024 HYBRID
Erzurum, Turkiye
Europe/Istanbul timezone

Silicon Carbide MOSFETs: From Devices to Advanced Packaging

Dec 21, 2024, 11:50 AM
20m
C/Ground-2 - Main Hall (Campus VSTS)

C/Ground-2 - Main Hall

Campus VSTS

50
Keynote Talk Electronics and Embedded Systems Opening Session

Speaker

Faiz Arith (Technical University of Malaysia Malacca)

Description

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have emerged as a key technology for high-power, high-efficiency applications, particularly in electric vehicles, renewable energy systems, and industrial motor drives. SiC’s superior material properties, such as wide bandgap, high thermal conductivity, and high breakdown voltage, allow it ideal for operating in harsh conditions and enabling faster-switching speeds, higher efficiencies, and reduced system size compared to traditional silicon-based devices. This paper explores the development of SiC MOSFETs, focusing on their device physics, performance characteristics, and advancements in fabrication technologies. It further examines the challenges and innovations in advanced packaging solutions, essential for maximizing the potential of SiC MOSFETs in practical applications. Integrating advanced packaging techniques such as power modules, thermal management strategies, and high-density interconnects is critical for ensuring optimal performance, reliability, and cost-effectiveness of SiC power devices in next-generation power electronic systems. This work provides a detailed outlook on the role of SiC MOSFETs and advanced packaging in transforming power electronics for a wide range of industries through a comprehensive review of the current state and future trends.

Keywords Silicon Carbide MOSFET, Advanced Packaging, Electric Vehicle, Power Modules

Primary author

Faiz Arith (Technical University of Malaysia Malacca)

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